Keep last sweep Duration (ms): Total duration of the simulation.
Cell, passive properties Eleak, cell reversal potential (mV): Reversal potential of the cell. Membrane time constant (ms): The lower the time constant, the faster the cell will respond to a stimulus. Changing Membrane time constant changes CM. Rinput (MOhm): Input resistance of the cell. Changing Rinput changes Membrane time constant. CM (pF): Membrane capacitance. Changing CM changes Rinput.
Cell, active properties AP threshold (mV): The voltage at which the cell fires an action potential. AP peak (mV): The peak of the action potentials. AP reset (mV): The membrane voltage returns to AP reset after an action potential. This represents a form of refractory period.
Current injection xshift (ms): Time-shift the start of current injection. Current injection starts at 0.03s if xshift is 0. Duration (ms): Total duration of current injection. Magnitude (nA): Magnitude of the injected current.
Externally defined train Frequency (Hz): Frequency of the pulse train, or the number of pulses per second. Number of pulses: Number of external pulses to stimulate the cell. Start (ms): The start time of the first pulse.
Synapse gsyn (nS): Synaptic conductance. Esyn (mV): Reversal potential of the synapse. τ1, fast (ms): Determines the synaptic conductance rise time. τ2, slow (ms): Determines the synaptic conductance decay time.
Short-term plasticity d, depression: The amount of depression per presynaptic action potential. f, facilitation: The amount of facilitation per presynaptic action potential. τD, recovery from depression (s): Recovery time constant from depression. τF, recovery from facilitation (s): Recovery time constant from facilitation.
Presets: Stored presets. L5_BC L5_BC_synapse L5_BC_slow L5_BC_train L5_BC_slow_train L5_PC L5_PC_synapse L5_PC_lnF L5_PC_synapseNoDep L5_MC_synapse pulse_summation exponential NMJ